Graphite Boat And Method For Producing Tungsten Carbide By Direct Carbonization of WO3+C+H2 Using Same
- Category: Tungsten Patents
- Published on 13 March 2013
- Hits: 2888
Brief description of this technology:
The invention discloses a graphite boat and a method for producing tungsten carbide by directly carbonizing WO3+C+H2 with the graphite boat, where the graphite boat is combined of top and bottom cabins, and the method: putting WO3 and C mixed powders into the two cabins, and directly producing WC in a carbonization furnace ventilated by hydrogen gas.

The invention can obtain WC product with uniform size, and stable carbon content; can shorten the whole reaction time of WO3 with C and H2, increasing WC output; can reduce H2 utilization, saving production cost; and can prolong service life of the carbonization furnace.
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Methods of Making Tungsten Carbide-based Annular Jewelry Rings
- Category: Tungsten Patents
- Published on 12 March 2013
- Hits: 2904
This Study relates to a method of making a finger ring which comprises:
Providing a jewelry finger ring that defines an aperture configured and dimensioned to receive a person's finger and which comprises a sintered mixture of at least two powdered materials comprising tungsten and a binder component in a relatively lesser amount than an amount of tungsten, with the annular ring having at least one external facet.

Tungsten carbide (WC) is a very hard ceramic (second only to diamond in hardness). It is a principle component in many powder metallurgy applications and is commonly referred to simply as carbide. Tungsten powder, either in elemental form or as a compound (most commonly WC), is either used alone or mixed with other powdered substances, such as other carbides, nitrides, ceramics and/or metals. The other powdered substances are usually selected for the properties, such as color or corrosion resistance, they impart to the completed piece. A powdered metal binder such as cobalt or nickel may also be included in the mixture. The powdered mixture is then poured into a mold and pressed to form a blank which can be shaped. The blank is then heated. This "sinters" the blank into a very hard solid.
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Tungsten Nitride Atomic Layer Deposition Processes
- Category: Tungsten Patents
- Published on 12 March 2013
- Hits: 3005
In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.

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Method and Apparatus For Depositing Tungsten After Surface Treatment
- Category: Tungsten Patents
- Published on 12 March 2013
- Hits: 2926
Brief description of this technology:
A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH3 or B2H6, followed by introduction of a tungsten containing compound, such as WF6, to form a tungsten layer. It is believed that the reductant reduces the fluorine content of the tungsten layer while improving the step coverage and resistivity of the tungsten layer. It is believed that the improved characteristics of the tungsten film are attributable to the chemical affinity between the reductants and the tungsten containing compound. The chemical affinity provides better surface mobility of the adsorbed chemical species and better reduction of WF6 at the nucleation stage of the tungsten layer.
The method can further include sequentially introducing a reductant, such as PH3 or B2H6, and a tungsten containing compound to deposit a tungsten layer. The formed tungsten layer can be used as a nucleation layer followed by bulk deposition of a tungsten layer utilizing.

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The Method for Sodium Tungstate
- Category: Tungsten Patents
- Published on 11 March 2013
- Hits: 2860
Technology brief description:
By supplying an oxidant constituted by sodium nitrate or sodium nitrite, the tungsten-containing material and oxidizing agent contact with each other in oxygen-containing atmosphere , so as to generate reaction product continuously and prepare sodium tungstate; Also can use this method to collect tungsten and prepare sodium tungstate.

The invention also provides: a method of preparing an aqueous solution of sodium tungstate, adding reducing agent into a solution which contains the above reaction product and subsequently it is dissolved in the water then collect he tungsten.
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The Preparation of High-purity Ammonium Tungstate by Tungsten Oxide
- Category: Tungsten Patents
- Published on 11 March 2013
- Hits: 3017
Provides a process for preparing high purity ammonium tungstate method, include using tungsten oxide, ammonium metatungstate, ammonium paratungstate, multi-ammonium tungstate and so on, adding pure water and ammonia (or aqueous ammonia) at normal temperature for ammonioalkyl stirred mix. After extraction impurity, under atmospheric pressure,adding superacid acid precipitation crystallization, solid-liquid separation after the end of the acid precipitation will the ammonium tungstate embodiment separated after drying of the product of. Tungstate ion concentration in the bulk solution was maintained at 7.5 to 11.0 in the 50 ~ 250g / L, solution PH control during ammonia dissolved ingredients during acid precipitation, acid precipitation endpoint pH should be controlled at 4.0 to 7.0. With the present invention can be greatly improved so that the purity of the product of ammonium tungstate over ammonium tungstate national standard zero-level category, meet the electronics industry, of the indicator of the catalyst industry can be used for the production purity of 4N (99.99%) of high purity tungsten powder and tungsten metal products.

This preparation method is easy to operate among present invention and the obtained ammonium tungstate product quality stability and crystallization rate can reach more than 96%.
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The Production of Tungsten Alloy Rod
- Category: Tungsten Patents
- Published on 08 March 2013
- Hits: 2848
The present invention relates to a method of the high density tungsten alloy rod material by using the extrusion process. The plasticizer is the white paraffin. In the particular temperature and speed of extrusion, the dough in a flowing stream of hydrogen is timedewaxing and pre-sintered. At last, liquid phase is sintering, and vacuum heat treatment. The dough has the features of high strength, high toughness, and stablility.
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This method can continuously be used to process large quantities of products. This method also has the advantages of high efficiency production, high materials utilization, stable quality, low cost.

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A New Type of Tungsten Alloy Ball
- Category: Tungsten Patents
- Published on 08 March 2013
- Hits: 2864
The present invention relates to a new type of tungsten alloy ball. It is mainly applied to the high-speed impact of cluster bombs. The main features of this new type are that the proportion of it is great,high strength, good toughness. It is a good high-speed impact, so that enhance the damage scope of cluster bombs. Alloy ball also joined the rare earth elements, which prevent the tungsten grain from growing. The result is becoming the ball and grain refinement. The rare earth elements hinder the process of diffusion of oxygen atoms in the alloy, thus can increase the resistance to oxidation and corrosion of the alloy.


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Degreasing Furnace - an Improved Tungsten Alloy Products
- Category: Tungsten Patents
- Published on 08 March 2013
- Hits: 1967
Brief description of this technology:
An improved tungsten alloy products degreasing furnace solves the problems of high levels of carbon residue, which becasue of paraffin the tungsten alloy products near the bottom of the furnace can not be fully excluded. its large-size horizontal hydrogen degreasing furnace hearth gas manifolddiversion holes by uniform distributed structure, the memorial under the dense distribution instead. The improved specifications horizontal hydrogen degreasing furnace hearth the gas manifold shunt hole layout. The improved structure of gas manifold can improve the state of flow hydrogen at the bottom of the furnace. Paraffin gas in different parts of the furnace can be rowed out of furnace at the discharge stage gas of 350 ℃ ~ 400 ℃ .Hydrogen does not have sufficient flow in the bottom of the large-sized furnace tungsten alloy ring products .The result of that isparaffin can not be fully ruled out. The tungsten alloy products have high carbon residue and decline the mechanical properties of tungsten alloy products. In this way ,we can improve the quality and stability of the mass tungsten alloy products in the large-sized degreasing furnace ,at the same time we can improve our efficiency.

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The Production Methods of Pressed and Sintered Tungsten Products
- Category: Tungsten Patents
- Published on 08 March 2013
- Hits: 2707
The production methods of the pressed and sintered tungsten products are belonging to the field of manufacture of finished metallic powder. The use of high-temperature reduced tungsten powder. At the room temperature, using a high voltage of 12-27 t / cm with a uniaxial bi in a rigid mold, the tungsten powder is directly pressed into a density of more than 80 to 93% of the theoretical density products. The tungsten powder is protected by hydrogen for 2-4 hours at a temperature of 1350 ° C to 2000 ° C. And then they are forced cooling or slow cooling. We may get the dense metal products, which the dimensional change is not greater than that of the green sheets of 1/2000 . The grinding of the surface uses specialized the vacuum adsorption mold, so that the products can achieve high accuracy and finish. This method not only can be used for the production of of pure tungsten semiconductor support material but also can be used for the production of tungsten composite products.

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